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            RJP30H2

Silicon N Channel IGBT
High speed power switching

 (Package name: TO-3PSG)
 Features
 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
 High speed switching: tf = 100 ns typ, tf = 180 ns typ
 Low leak current: ICES = 1 A max
Collector to Emitter voltage              VCES 360 V
Gate to Emitter voltage                      VGES ±30 V
Collector current                                Ic 35 A
Collector peak current ic(peak) Note1 250 A

          RJP63K2

Silicon N Channel IGBT
High Speed Power SwitchingFeatures
 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ
 High speed switching: tr = 60 ns typ, tf = 200 ns typ.
 Low leak current: ICES = 1 A max
 Isolated package TO-220FL